Electroreflectance and photoreflectance spectra of tricolor III-nitride detector structures
✍ Scribed by Drabinska, Aneta ;Korona, K. P. ;Pakula, K. ;Baranowski, J. M.
- Book ID
- 105364163
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 861 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
Results of photoreflectance and electroreflectance on tunable UV detector are presented. The active region of the detector consists of three layers: GaN, Al~0.1~Ga~0.9~N, and Al~0.2~Ga~0.8~N. Due to different spontaneous and piezoelectric polarization two‐dimensional electron gases with high electron concentration are formed at each interface. 2D electron gas may be depleted from particular interfaces by applied reverse bias to the Schottky diode. Therefore to the active region of the detector successive layers are enclosed. The photoreflectance spectra show that in “clean” structure low electric field is present in the active region of the detector and on both interfaces the 2D electron gases are present. In electroreflectance measurement with external electric field applied, there is possibility to observe the evolution of the electric field in these layers and the depletion of 2D electron gases from interfaces. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)