๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electrophysical properties of gadolinium tellurite-boron oxide sintered materials

โœ Scribed by L. A. Ivanchenko; V. M. Frankfurt; L. S. Zaletilo; V. A. Serdyuk; E. I. Linnik; E. I. Egorova

Publisher
Springer
Year
1990
Tongue
English
Weight
370 KB
Volume
29
Category
Article
ISSN
1573-9066

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Structural and Mechanical Properties of
Structural and Mechanical Properties of Activated Sintered Boron Carbide-Based Materials
โœ D.D. Radev; Z. Zakhariev ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 539 KB

Boron carbide based materials (B C-Me IV-VI V B y ) were obtained by pressureless sintering at 2150-2250ยฐC in the presence of some transition metal (IV-VI group) carbides (Me IV-VI V C y , where Me is Ti, V, Cr, and W). The structural and mechanical (micro hardness, abrasive wear resistance) propert

Boron out-diffusion mechanism in oxide a
Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties
โœ B. Pelletier; M. Juhel; C. Trouiller; D. Beucher; J.L. Autran; P. Morin ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 569 KB

The interactions occurring between the pMOSFET sidewall spacers and the shallow junctions underneath can be detrimental for the transistor performance. In fact, a significant part of the p-type LDD boron may out-diffuse into the spacer oxide layer during the doping activation annealing, resulting in