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Electronically induced changes in structural properties of solid Kr

โœ Scribed by I.Ya. Fugol'; E.V. Savchenko; A.N. Ogurtsov; O.N. Grigorashchenko

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
317 KB
Volume
190
Category
Article
ISSN
0921-4526

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โœฆ Synopsis

Excitation of the electron subsystem is shown to affect the structural properties of solid Kr at low temperatures. An electronically induced stable point defect formation has been observed. Experiments were performed under irradiation by electrons of subthreshold energy. Defects were detected by means of vacuum ultraviolet luminescence spectroscopy. The results obtained reveal an excited-state mechanism of defect formation when the defect is formed during the lifetime of the excited state. Self-trapping of excitons in the long-lived electronic state 3r.~ is shown to be a stimulating factor.

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A variety of high-pressure metallization and metal-semimetal transitions, crystallographic phase transitions, and equation of state and lattice vibrational anomalies are reviewed in terms of the concepts of electronic transition and pressure-induced loss of covalency.