Electronic transport time through mesoscopic devices with contact barriers
β Scribed by Alexander Altland
- Book ID
- 102713812
- Publisher
- John Wiley and Sons
- Year
- 1994
- Tongue
- English
- Weight
- 661 KB
- Volume
- 506
- Category
- Article
- ISSN
- 0003-3804
No coin nor oath required. For personal study only.
β¦ Synopsis
Information about the transport time of electrons through a quasi one-dimensional sample is obtained by calculating the energy auto-correlation function of the conductance. Depending on the length of the sample and its coupling to the external device (here modelled by perfectly conducting leads), the transport time undergoes a smooth crossover between two different limiting regimes. In the case of long samples and good coupling it coincides with the diffusion time. In the opposite limit of short and weakly coupled systems, however, the transport time is given by the reciprocal of the quantum mechanical decay width into the leads. The transition between both regimes is discussed in terms of a few model independent concepts.
π SIMILAR VOLUMES
For the first time an enhancement of weak localization by Andreev-reflection has been measured. This means that the interface between the Sn/Ti contacts and the two-dimensional electron gas (2DEG) in the GaAs/AIGaAsheterostructure is practically barrier-free. The effect can be depressed by increased