𝔖 Bobbio Scriptorium
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Electronic transport time through mesoscopic devices with contact barriers

✍ Scribed by Alexander Altland


Book ID
102713812
Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
661 KB
Volume
506
Category
Article
ISSN
0003-3804

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✦ Synopsis


Information about the transport time of electrons through a quasi one-dimensional sample is obtained by calculating the energy auto-correlation function of the conductance. Depending on the length of the sample and its coupling to the external device (here modelled by perfectly conducting leads), the transport time undergoes a smooth crossover between two different limiting regimes. In the case of long samples and good coupling it coincides with the diffusion time. In the opposite limit of short and weakly coupled systems, however, the transport time is given by the reciprocal of the quantum mechanical decay width into the leads. The transition between both regimes is discussed in terms of a few model independent concepts.


πŸ“œ SIMILAR VOLUMES


Electron transport in mesoscopic GaAs/Al
✍ K.-M.H. Lenssen; L.A. Westerling; P.C.A. Jeekel; C.J.P.M. Harmans; J.E. Mooij; M πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 158 KB

For the first time an enhancement of weak localization by Andreev-reflection has been measured. This means that the interface between the Sn/Ti contacts and the two-dimensional electron gas (2DEG) in the GaAs/AIGaAsheterostructure is practically barrier-free. The effect can be depressed by increased