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Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations

✍ Scribed by S. Leconte; L. Gerrer; E. Monroy


Book ID
104053403
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
448 KB
Volume
40
Category
Article
ISSN
0026-2692

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We present a theory of the electronic energy levels and wave functions within GaN quantum dots (QDs), including the e ect of the strain ΓΏeld of a nearby dislocation and a full treatment of the built-in electrostatic potential. The QD carrier spectra and wave functions are calculated using a plane-wa