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Electronic Transport Properties of Thallium Sesquiselenide Single Crystals

โœ Scribed by Dr. G. A. Gamal


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
268 KB
Volume
28
Category
Article
ISSN
0232-1300

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โœฆ Synopsis


Abstract

Electronic transport measurements were made on single crystal samples of Tl~2~Se~3~. The crystals were prepared by a special design based on Bridgman technique. The influence of temperature on the electrical conductivity, Hall effect, Hall mobility and the carrier concentration was investigated in the temperature range 200โ€“400 K. The energy gap as well as the ionization energy were calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range.


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