Electronic transport across niobium-silicon interfaces

✍ Scribed by D.R. Heslinga; W.M. van Huffelen; T.M. Klapwijk; S.J.M. Bakker; E.W.J.M. van der Drift

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 453 KB
• Volume: 30
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/0011-2275(90)90200-v

✦ Synopsis

A critical factor for current flow from a superconductor into a semiconductor is the transparency of the Schottky barrier at the interface. Theoretically, significant penetration of superconducting carriers into the semiconductor is not expected for any doping concentration. This is confirmed by measurements of the absence of a depression of the critical temperature of thin Nb films on doped Si. I-V characteristics of coplanar Nb -Si -Nb junctions are also presented. Results can be understood as back-to-back super-Schottky diode behaviour. At very high doping concentrations the onset of Josephson coupling is observed.