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Electronic surface properties of Ga and In containing III–V compounds

Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 165 KB
Volume: 28
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(78)80617-4

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## Abstract For Abstract see ChemInform Abstract in Full Text.

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together with tight-binding calculations. We have considered several different types of structural models, including the relaxation model in which surface Ga atoms move into and As atoms move out of, the surface by an amount such that the plane through the nearestneighbour Ga and As atoms makes a ti