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Electronic subbands at GaAsAlGaAs heterojunctions in parallel magnetic fields

✍ Scribed by V.M.S. Gomes; G.M.G. Oliveira; J.R. Leite; A.S. Chaves

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
299 KB
Volume
6
Category
Article
ISSN
0749-6036

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Narrow conducting channels have been fabricated in the two dimensional electron gas in a GaAs-AlGaAs heterostructure, using a recently developed shallow mesa etch technique. Four terminal high field magnetoresistance measurements at temperatures down to 2 K have been performed on samples with etched