Electronic-structure study of Ni3Al, Ni3Ga, Ni3In, and NiGa using X-ray photoemission spectroscopy and Bremsstrahlung isochromat spectroscopy

✍ Scribed by L.-S. Hsu; G.-H. Gweon; J.W. Allen

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 159 KB
• Volume: 60
• Category: Article
• ISSN: 0022-3697
• DOI: 10.1016/s0022-3697(99)00196-1

✦ Synopsis

The electronic structures of Ni 3 Al, Ni 3 Ga, Ni 3 In, and NiGa were studied by high-resolution X-ray photoemission spectroscopy (XPS) and Bremsstrahlung isochromat spectroscopy (BIS). The XPS valence-band and BIS spectra of Ni 3 Al and Ni 3 Ga agree well with available density-of-states (DOS) curves derived from band-structure calculations. The asymmetry index of the Ni 2p core levels decreases in the series Ni 3 Al, Ni 3 In, Ni 3 Ga, and NiGa. This observation implies that the density of states at the Fermi level and the number of Ni 3d holes per Ni atom both decrease in the series.