Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies

✍ Scribed by Kaminska, A; Ma, C-G; Brik, M G; Kozanecki, A; Boćkowski, M; Alves, E; Suchocki, A

• Book ID: 121351476
• Publisher: Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 596 KB
• Volume: 24
• Category: Article
• ISSN: 0953-8984
• DOI: 10.1088/0953-8984/24/9/095803