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Electronic structure of the C defects of Si(001) measured by scanning tunneling spectroscope at room and low temperature (80 K)

✍ Scribed by K. Hata; S. Ozawa; Y. Sainoo; K. Miyake; H. Shigekawa

Book ID: 117220276
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 476 KB
Volume: 447
Category: Article
ISSN: 0039-6028
DOI: 10.1016/s0039-6028(99)01166-8

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