Electronic structure of superlattices of II–VI/III–V diluted magnetic semiconductors

✍ Scribed by T. Kamatani; H. Akai

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 169 KB
• Volume: 10
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(01)00073-x

✦ Synopsis

The superlattices of the diluted magnetic semiconductors (Al; X ) (As; Y )=(Cd; Mn) Te, where X and Y are Si, C and antisite Al and As, are investigated by use of KKR-CPA-LDA ( Korringa-Kohn-Rostoker coherent-potential approximation and the local density approximation) ab initio calculation. The superlattice whose unit cell is composed of a single AlAs layer and a single CdMnTe layer becomes a ferromagnetic when the carrier holes are increased. In the case where the number of the CdMnTe layer in the unit cell is increased, the interlayer coupling between the CdMnTe layers is antiferromagnetic because carrier holes reside only at the III-V=II-VI heterosurface.