Electronic structure of RCoxGe2 (R=Ce, Pr, Gd) compounds

✍ Scribed by B. Penc; A. Szytuła; E. Wawrzyńska; A. Winiarski

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 316 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200562432

✦ Synopsis

Abstract

The electronic structure of the RCo~x~Ge~2~ (R=Ce, Pr, Gd) compounds with the orthorhombic crystal structure of CeNiSi~2~‐type was studied by X‐ray photoemission spectroscopy. The valence bands of CeCo~0.86~Ge~2~ and PrCo~0.85~Ge~2~ compounds have the similar character. Near the Fermi level the broad peak corresponding to the Co 3d and R 4f and 5d6s states is observed. In the case of GdCo~0.64~Ge~2~, the strong intensity peak at 8.7 eV corresponding to Gd 4f states is observed. The analysis of the XPS spectra of Ce and Pr 3d~5/2~ and 3d~3/2~ in the Gunnarson‐Schönhammer model give the information on the hybridization of the f orbital with the conduction band. The hybridization energy equal 93 eV for R=Ce and 143 eV for R=Pr, respectively indicate stability of the shell in these compounds. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)