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Electronic Structure of a-SiHx with Arbitrary Hydrogen Concentration

✍ Scribed by S. Wilke; J. Mašek; B. Velický


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
789 KB
Volume
135
Category
Article
ISSN
0370-1972

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A variational approach is employed to obtain the ground and the first excited state binding energies of an electron bound to a hydrogenic impurity in a polar semiconductor quantum dot (QD) with symmetric parabolic confinement in both two and three-dimensions. We perform calculations for the entire r