Electronic structure and metal-insulator transitions in Ti and V oxides

✍ Scribed by I. Hase; A. Fujimori; H. Namatame; Y. Fujishima; Y. Tokura; M. Abbate; F.M. de Groot; J.C. Fuggle; H. Eisaki; S. Uchida

• Book ID: 103939036
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 180 KB
• Volume: 186-188
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(93)90790-d

✦ Synopsis

The electronic structures of various Ti and V oxides have been studied by photoemission and X-ray absorption spectroscopy. For LaxSr 1 xTiO3, electron doping induces new photoemission feature within the band gap of SrTiO 3. For the 3d ~ systems, as the Hubbard gap collapses and U/W becomes small, a new spectral feature grows around the Fermi level.