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Electronic structure and light induced degradation of amorphous silicon-germanium alloys

✍ Scribed by Fan Zhong; Chih-Chiang Chen; J.David Cohen


Book ID
115990949
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
434 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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## Abstract The complex band structures, the imaginary parts of the dielectric constant, and the densities of states of electrons in amorphous Ge and Si are calculated using a generalized pseudopotential formalism based on the Green's function techniques. The short range order is assumed to be the