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Electronic structure and bonding properties in TiSi2

✍ Scribed by P. J. W. Weijs; M. T. Czyżyk; J. C. Fuggle; W. Speier; D. D. Sarma; K. H. J. Buschow


Book ID
112514573
Publisher
Springer
Year
1990
Tongue
English
Weight
767 KB
Volume
78
Category
Article
ISSN
1434-6036

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Electronic structure and bonding of Be2
✍ V.E. Bondybey 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 557 KB

hscr-induced ~luorcscence of Bez produced by lnscr v3porizntion of the metal is observed and analyzed. The X 'Ed \*wund state is characteri-red by re = 2.15 A and D, = 790 5 30 cln = much more srrongly bound \_4 t it, and B 'x: -t \_ The spectroscopic constants and lifetimes of tlrE z, states arc al