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Electronic Raman scattering in differently doped high-Tc materials

✍ Scribed by B. Stadlober; R. Nemetschek; O.V. Misochko; R. Hackl; P. Müller; J.J. Neumeier; K. Winzer

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 139 KB
Volume: 194-196
Category: Article
ISSN: 0921-4526
DOI: 10.1016/0921-4526(94)91269-6

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✦ Synopsis

Raman results of differently doped cuprate superconductors with one, two, and three CuO 2 layers are presented. It is shown that the observed continua originate predominantly from carrier excitations in the planes. For the normal state we obtain carrier relaxation rates which are in qualitative agreement with transport measurements. The anisotropy of the superconducting order parameter depends on the doping level.

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