Electronic properties of Y-junctions in SnO2 nanowires

✍ Scribed by Ayan Kar; Michael A. Stroscio; Mitra Dutta; M. Meyyappan

• Book ID: 104541990
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 581 KB
• Volume: 248
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.201147233

✦ Synopsis

Abstract

Growth conditions leading to kinking and branching in SnO~2~ nanowires have been investigated. Lower temperature growth at 750 °C leads to Y‐junctions as seen previously in carbon nanotubes, whereas straight nanowires are obtained at 880 °C. Photoemission valence band spectroscopy is used to show that the carrier concentration and Fermi level position vary with diameter. Thus, the stem and branches in a Y‐junction can have completely different semiconducting properties, leading to opportunities in novel device construction.