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Electronic properties of dilute copper alloys I. theory

✍ Scribed by I. Mertig; E. Mrosan; R. Zeller; P. H. Dederichs; P. Ziesche


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
493 KB
Volume
117
Category
Article
ISSN
0370-1972

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✦ Synopsis


Abstract

The electronic properties of 4d transition metal impurities and sp impurities of the third, fourth, and fifth rows of the periodic table in a Cu host are calculated self‐consistently. The impurity is embedded in the perfect crystal environment and described by a single perturbed muffin‐tin potential in the KKR‐Green function scheme. The influence of the impurities on the de Haasvan Alphen effect (Dingle temperatures and changes in areas of the Fermi surface) and the residual resistivity are discussed. For the residual resistivity the linearized Boltzmann equation is solved taking into account the full anisotropic band structure of the host.


πŸ“œ SIMILAR VOLUMES


Electronic Properties of Dilute Copper A
✍ I. Mertig; E. Mrosan; R. Zeller; P. H. Dederichs πŸ“‚ Article πŸ“… 1983 πŸ› John Wiley and Sons 🌐 English βš– 338 KB

## Abstract The residual resistivity of 4d transition metal impurities and of sp impurities of the third, fourth, and fifth rows of the periodic system in a Cu host is calculated. The linearized Boltzmann equation is solved using the degenerate kernel technique taking into account the full anisotro

Electronic properties of dilute copper a
✍ I. Mertig; E. Mrosan; R. Zeller; P. H. Dederichs πŸ“‚ Article πŸ“… 1983 πŸ› John Wiley and Sons 🌐 English βš– 522 KB

## Abstract A calculation of the Dingle temperatures and changes of the Fermi surface areas of Cu resulting from alloying with 4d transition metal impurities and with sp impurities of the third, fourth, and fifth rows of the Periodic System is presented. The theoretical results are compared with ex