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Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

✍ Scribed by F. Danie Auret; W.E. Meyer; P.J. Janse van Rensburg; M. Hayes; J.M. Nel; Holger von Wenckstern; H. Schmidt; G. Biehne; H. Hochmuth; M. Lorenz; M. Grundmann


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
178 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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