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Electronic properties of boron-doped diamond on the border between the normal and the superconducting state

โœ Scribed by K. Winzer; D. Bogdanov; Ch. Wild

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
430 KB
Volume
432
Category
Article
ISSN
0921-4534

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โœฆ Synopsis

We report on measurements of resistivity and magnetoresistivity, Hall effect and upper critical field on normal and superconducting heavily boron-doped diamond layer produced by microwave plasma assisted chemical vapour deposition. The magnetoresistivity shows a characteristic change as a function of the boron concentration with strong evidence for a closed Fermi surface for superconducting samples. Although experimental and theoretical results favour a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism, the observed dependence of the transition temperature T C on the hole concentration cannot be consistently described by the conventional theory.

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