Bi 2 Se 3-x As x single crystals with the As content of c As = 0 to 2.0x10 19 atoms/cm 3 prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency ω p , optica
Electronic properties of Bi2Se3 crystals
✍ Scribed by G.R. Hyde; H.A. Beale; I.L. Spain; J.A. Wollam
- Publisher
- Elsevier Science
- Year
- 1974
- Tongue
- English
- Weight
- 88 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0038-1098
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