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Electronic energy levels of point defects at the GaSb (110) surface

โœ Scribed by R.E. Allen; J.D. Dow; H.P. Hjalmarson

Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
411 KB
Volume
41
Category
Article
ISSN
0038-1098

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We report on an isolated cluster approach to determine local electronic structures of TiO, surfaces before and after formation of intrinsic defects, i.e., oxygen vacancies, at different crystallographic sites. In particular, isolated oxygen vacancies at bridging sites, isolated oxygen vacancies at i