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Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

✍ Scribed by F.D. Auret; S.M.M. Coelho; G. Myburg; P.J. Janse van Rensburg; W.E. Meyer


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
199 KB
Volume
404
Category
Article
ISSN
0921-4526

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