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Electron velocity overshoot in a GaAs-based p-i-n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy

✍ Scribed by Grann, E. D.; Tsen, K. T.; Sankey, O. F.; Ferry, D. K.; Salvador, A.; Botcharev, A.; Morkoç, H.

Book ID: 127295661
Publisher: American Institute of Physics
Year: 1995
Tongue: English
Weight: 253 KB
Volume: 67
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.115041

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