Superradiant dissipative tunneling in a
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Eliade Stefanescu; Werner Scheid
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Article
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2007
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Elsevier Science
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English
β 203 KB
We propose a semiconductor device with two p-i-n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the secon