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Electron transport study of a lateral InGaAs quantum dot

✍ Scribed by M. Larsson; D. Wallin; H.Q. Xu

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
186 KB
Volume
40
Category
Article
ISSN
1386-9477

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We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the