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Electron transport and optical properties of InGaAs quantum wells with quasi-periodic (L0∼30 nm) interface corrugation grown on vicinal (1 1 1)B GaAs

✍ Scribed by T Noda; Y Nagamune; Y Nakamura; H Sakaki


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
116 KB
Volume
13
Category
Article
ISSN
1386-9477

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