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Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

โœ Scribed by Tilak, V.; Matocha, K.; Dunne, G.


Book ID
114618945
Publisher
IEEE
Year
2007
Tongue
English
Weight
219 KB
Volume
54
Category
Article
ISSN
0018-9383

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