Electron relaxation mechanisms inn-Bi-Sb semiconducting alloys
✍ Scribed by V. D. Kagan; N. A. Red’ko; N. A. Rodionov; V. I. Pol’shin
- Book ID
- 110132258
- Publisher
- Springer
- Year
- 2002
- Tongue
- English
- Weight
- 161 KB
- Volume
- 95
- Category
- Article
- ISSN
- 1063-7761
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📜 SIMILAR VOLUMES
Electrical resistivity studies have been carried out on three different Bi-Sb alloys in the temperature range 100-300K. The observed behaviour of all the samples, in which one is semimetallic and other two are semiconductors, can be explained on the basis of the model presented for Bi-Sb energy band
Electrical resistance measurements of annealed Bi6o Sb4o alloy thin films of various thicknesses vacuum deposited at different substrate temperatures have been carried out from about 80 K to 500 K. The observed variation in resistance with temperature has been explained on the basis of impurity cond