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Electron paramagnetic resonance and relaxation of amorphous silicon below 1 K

✍ Scribed by T.R. Askew; P.J. Muench; H.J. Stapleton; K.L. Brower


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
302 KB
Volume
49
Category
Article
ISSN
0038-1098

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We describe the defect properties in nitrogen plasma treated porous silicon (PS) studied using electron paramagnetic resonance (EPR). We consider the dependence of the paramagnetic properties of the defects on the structure of PS. The nitrogen plasma treatment changed the structure of PS. After the