Electron mobilities in solid tetramethylsilane:effect of liquid-solid phase change
β Scribed by Yoshio Nakamura; Hideki Namba; Kyoji Shinsaka; Yoshihiko Hhatano
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 281 KB
- Volume
- 76
- Category
- Article
- ISSN
- 0009-2614
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The electron Hall mobility in tetramethylsihrne (T&IS) has been nnxuured at room temperature using the Rcdtirld rrchniquc. The resulting mobility. 124 crn'/V s is 35% hi;;hcr than the time-of-flight mobility. From their comparison WC' conclttde that it is likely that the electron-scatterins nuxhania
We have measured the Hall mobility of excess electrons in liquid tetramethylsilane (TMS) between room temperature and 164Β°C. The novel result is that, within an experimental error of = IO%, the Hall mobility fiiH is equal to the drift mobility pn; ,~u= 101 + 7 cmZ/V s at 22Β°C and 53 + 5 cm\*/Vs at
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