Electron lifetime measurements in MQW detectors: absorption and photoresponse saturation by a free electron laser
✍ Scribed by J.Y. Duboz; E. Costard; E. Rosencher; P. Bois; J.M. Berset; D. Jaroszynski; J.M. Ortega
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 139 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
We measured the absorption and photoresponse saturation of GaAs/AIGaAs quantum wells as a function of the incident power. We used picosecond micropulses with a power density up to (10 \mathrm{GW} / \mathrm{cm}^{2}) delivered by a free electron laser. First, we compared the absorption in a sample with a bound-to-bound transition to the absorption in a sample with a bound-to-free transition, and found that the electron lifetime in the bound-to-bound transition is about four times shorter than for the bound-to-free transition. Then, we measured the photoresponse saturation in multi-quantum well detectors for different biases. We observed that the electron lifetime increases with the applied electric field from about (1 \mathrm{ps}) at zero field up to (10 \mathrm{ps}) at (20 \mathrm{kV} / \mathrm{cm}).