A simple method to compute the carrier energy states, miniband parameters and dispersion characteristics for single and multiple quantum well and superlattice structures is presented.
The method utilizes the continuity of the envelope function across the heterojunctions according to the boundary conditions that both the wavefunction # and the particle current density ~'/m* be continuous at each interface.
The nonuniform potential distribution encountered in doped or compositionally graded materials is approximated by piecewise constant potential functions.
In addition to being conceptually simple, the method is readily adopted to fairly complex structures where other more sophisticated methods such as LCAO, reduced Hamiltonian and tight binding theories may become unfeasible or unmanageable.
It is shown that for an arbitrary stepped potential variation, the eigenvalues (or the energy states) of quantum wells or a finite number of coupled quantum wells can be found by utilizing a transverse resonance method which is readily implemented on a digital computer for the computation of these eigenvalues.
For the case of periodic superlattices, the miniband parameters and the dispersion characteristics are computed from a suitably defined transmission matrix associated with a unit cell of the superlattice which may itself consist of multiole layers.
Typical results for the computed parameters for several wells and simple, biperiodic, binary and polytype superlattices consisting of various AlxGa1_xAS and InxGa1_xAS alloys are presented. I.