๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electron energy loss measurements on PbF2, PbCl2, PbBr2 and PbI2

โœ Scribed by Raul A. Abreu


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
237 KB
Volume
100
Category
Article
ISSN
0375-9601

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Ultraviolet reflectivity and electron-en
๐Ÿ“‚ Article ๐Ÿ“… 1976 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 145 KB

35 1674. Deep uv lithography. (USA) Using deep uv light ranging from 2000 to 2600 A, submicrometer patterns in photoresist with height-to-width aspect ratios as high as 15 can be achieved. The well known electron-beam positive resist, polymethyl methacrylate (PMMA), is used as the deep uv photoresis

Triplet Energy of 2, 2-Dimethylisoindene
โœ Michael Allan; Knut R. Asmis; Sarah El Houar; Edwin Haselbach; Marco Capponi; Be ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ German โš– 533 KB

## Abstract The excited electronic states of 2, 2โ€dimethylisoindene (1) have been studied by electronโ€energyโ€loss spectroscopy. Its vertical gasโ€phase triplet (1^3^B~2~), and singlet (1^1^B~2~) excitation energies are 1.61 and 3.19 eV, respectively. The excited states are thus lowered by 0.49 eV an