By oxidizing wedge-shaped Al films we have fabricated magnetic tunneling junctions with over-, complete, and under-oxidized barriers. By investigating the capacitance spectra, we are able to study the effects due to interface charge accumulation. The electron-electron interaction among accumulated i
Electron-electron interaction effects in TiAl alloys
✍ Scribed by J.J. Lin; C.Y. Wu
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 143 KB
- Volume
- 194-196
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
We have measured the resistivities p of Til_=AI= alloys (x < 0.135) between 4 and 25 K. As the temperature T is lowered, a resistivity rise Ap/v'~ ~ _p2.5 is observed. The absolute magnitude of this rise is consistent within a factor ~ 1.5 with the prediction of the electron-electron interaction theory.
In the past decade or so, it has been realized that electron-electron interaction effects are indispensable in understanding the electronic conduction in disordered metals [1,2]. At low temperatures, the interaction effects result in a temperaturedependent correction, Ap, to the residual resistivity p~. It has also been realized
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