✦ LIBER ✦

Electron-beam-induced decomposition and oxidation of thin CaF2-layers on Si(111) Studied by auger electron spectroscopy

✍ Scribed by Stefan Baunack; Alfred Zehe

Book ID: 118363584
Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 736 KB
Volume: 225
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(90)90450-m

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Vibrational properties of thin CaF2/Si(1

Vibrational properties of thin CaF2/Si(111) epitaxial layers studied by high resolution electron energy loss spectroscopy

✍ J.L. Longueville; P.A. Thiry; J. Ghijsen; R. Caudano 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 506 KB

Electron beam effects due to bombardment

Electron beam effects due to bombardment of CaF2 layers investigated by auger electron spectroscopy

✍ Baunack, S. ;Landgraf, S. ;Zehe, A. 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 277 KB

Submonolayer growth of Ag on Cu(111) stu

Submonolayer growth of Ag on Cu(111) studied by proton induced Auger electron spectroscopy

✍ R. Pfandzelter; J. Landskron 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 557 KB

Adsorption and decomposition of HNCO on

Adsorption and decomposition of HNCO on Cu(111) surface studied by Auger electron, electron energy loss and thermal desorption spectroscopy

✍ F. Solymosi; J. Kiss 📂 Article 📅 1981 🏛 Elsevier Science ⚖ 70 KB

Adsorption and decomposition of HNCO on

Adsorption and decomposition of HNCO on Cu(111) surface studied by auger electron, electron energy loss and thermal desorption spectroscopy

✍ F. Solymosi; J. Kiss 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 994 KB

Ion-beam-induced crystallization of carb

Ion-beam-induced crystallization of carbon-implanted silicon studied by auger electron spectroscopy

✍ Steffen, Hans Joachim 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 501 KB

The inÑuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Â 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.