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Electron backscattering from a silicon detector from 0.182 to 0.579 MeV

โœ Scribed by A. Carrington; H.W. Nicholson; J. Krivicich

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
273 KB
Volume
248
Category
Article
ISSN
0168-9002

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The Hecht model describes the charge collection efficiency of semiconductor detectors using the mean free path of the charge carriers. While the fits to data are very good for non-irradiated detectors, modifications to the model are necessary to take into account the structural changes in the detect