Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

✍ Scribed by Rougieux, F. E.; Macdonald, D.; Cuevas, A.; Ruffell, S.; Schmidt, J.; Lim, B.; Knights, A. P.

• Book ID: 118038884
• Publisher: American Institute of Physics
• Year: 2010
• Tongue: English
• Weight: 529 KB
• Volume: 108
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3456076