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Electron and hole mobility enhancement in strained SOI by wafer bonding

✍ Scribed by Lijuan Huang; Chu, J.O.; Goma, S.A.; D'Emic, C.P.; Koester, S.J.; Canaperi, D.F.; Mooney, P.M.; Cordes, S.A.; Speidell, J.L.; Anderson, R.M.; Wong, H.-S.P.

Book ID: 114616852
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 279 KB
Volume: 49
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2002.802675

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