Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces : O. Leistiko, Jr., A. S. Grove and C. T. Sah, IEEE Transactions on Electron Devices, p. 248 (May 1965)

• Book ID: 113190303
• Publisher: Elsevier Science
• Year: 1966
• Tongue: English
• Weight: 99 KB
• Volume: 5
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(66)90052-7