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Electroluminescence from Si/CaF2 Multilayers Grown by Molecular Beam Epitaxy

✍ Scribed by Ioannou-Sougleridis, V. ;Tsakiri, V. ;Nassiopoulou, A. G. ;Photopoulou, P. ;Bassini, F. ;Arnaud d'Avitaya, F.

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
202 KB
Volume
165
Category
Article
ISSN
0031-8965

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Photoluminescence has been observed from Si~ \_xGex alloy layers, superlattices and non-periodic multilayers where x was varied from 0 to 0.6. A p-type Si082Ge0 is alloy layer 200 nm thick, grown by molecular beam epitaxy (MBE), has been fabricated into a mesa diode which operated as a light-emittin