A mechanism for electroless Cu plating o
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SebastiΓ£o G. dos Santos Filho; AndrΓ©A. Pasa; Claus M. Hasenack
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Article
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1997
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Elsevier Science
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English
β 363 KB
In this work the electrochemical mechanism of copper plating on silicon during immersion into diluted hydrofluoric acid (D-HF) solutions is investigated. For that purpose, silicon wafers were immersed for various time intervals into D-HF intentionally contaminated with copper from copper sulphate. T