Electrodeposition of Bi2Te3films and micro-pillar arrays on p-Si(100) wafers

✍ Scribed by Liu, Da-Wei ;Xu, Ying ;Li, Jing-Feng

• Book ID: 105365476
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 492 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200925149

✦ Synopsis

Abstract

Bi~2~Te~3~ films and micro‐pillar arrays were electrodeposited, respectively, onto p‐Si(100) wafers and into micro‐templates that were etched on the same wafers with reactive ion etching (RIE). With the potentials of −100 to −300 mV (vs. saturated calomel electrode), Bi~2~Te~3~ films can be obtained from Bi^3+^ and HTeO solution, which showed a (001) preferential orientation. Micro‐templates with vertical holes of 15–18 µm in diameter and 40 µm in depth were etched on p‐Si(100) wafers, and then were set as cathodes. During electrodeposition, the SiO~2~ layer on the wafer surface served as an insulating layer, and Bi~2~Te~3~ only crystallized on the inner wall of etched holes. With the potentials of −300 to −700 mV, Bi~2~Te~3~ pillar arrays can be fabricated by filling electrodeposition, and the filling ratios and qualities were sensitive to the potentials. After removing the templates with RIE, the Bi~2~Te~3~ pillars can stand on the wafer surfaces.