Electrodeposited Films of CdxHg1?xTe with Bandgap Energy in the Range 1.2-1.5 eV

✍ Scribed by Rakhshani, A.E.

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 172 KB
• Volume: 191
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200205)191:1<179::aid-pssa179>3.0.co;2-3

✦ Synopsis

Electrodeposition of Cd

x Hg 1--x Te films with a thickness of about 1 mm and a bandgap energy in the range 1.2-1.5 eV (0.87 < x < 1) is investigated. Deposition is performed on stainless steel substrates at 80-90 C from a bath containing CdSO 4 , TeO 2 and HgCl 2 . Film composition and bandgap energy are evaluated, respectively, from the variation of the deposition current with time and from the spectral response of photocurrent in Schottky devices formed on these films. In addition, other characterization techniques such as XRD, SEM and EDAX are also used. Films grow with a graded composition unless HgCl 2 is added periodically into the solution during deposition. Films consisting of several layers with different thickness and composition can also be deposited. Films consist of grains with an average size of about 100 nm and are less oriented than grains in identically deposited CdTe films.