Electrocrystallization of copper on single crystal spheres—II. Tracer measurement of distribution of the deposit

✍ Scribed by N.A. Economou; D. Trivich

• Publisher: Elsevier Science
• Year: 1961
• Tongue: English
• Weight: 665 KB
• Volume: 3
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(61)85006-8

✦ Synopsis

The distribution of copper electrodeposited on single crystal copper spheres from an acid copper bath was studied by tracer techniques. Detailed scanning of segments of the spheres from (100) poles to {llO} poles showed that the deposit thickness goes through a minimum at some intermediate point. The position of the minimum was not dependent on plating time but was strongly dependent on the average current density. This dependence on current density was the same as that of the limit of layer growth observed microscopically, and both followed a relation of log i*, = A -B cos 8. The variation of the local effective current at each point in the layer growth region with respect to angular distance from the {loo} pole suggests that only certain parts of the layers are effective in the reduction process.

Resnm&La

distribution du cuivre depose Bectrolytiquement sur des spheres en monocristal de cuivre a partir dun bain cuivrique acide a Bte etudiee par les techniques des traceurs. Un balayage detaille des segments spheriques des poles (100) aux poles (110) a demontre que l'epaisseur du depot passe par un minimum a un certain point intermediaire. La position de ce minimum ne depend pas du temps de depot mais depend fortement de la densite moyenne du courant. Cette dependance de la densite de courant est la meme que celle de la limite de croissance en couche observe% microscopiquement, toutes deux suivant la relation log i,, = A -B cos 8. La variation du courant effectif local en chaque point de la region de croissance en couche par rapport a la distance angulaire du pole (100) suggere que certaines parties seulement des couches sont effectives dans le processus de reduction.