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Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

✍ Scribed by P. N. Brunkov; A. A. Gutkin; M. E. Rudinsky; O. I. Ronghin; A. A. Sitnikova; A. A. Shakhmin; B. Ya. Ber; D. Yu. Kazantsev; A. Yu. Egorov; V. E. Zemlyakov; S. G. Konnikov


Book ID
111444954
Publisher
Springer
Year
2011
Tongue
English
Weight
315 KB
Volume
45
Category
Article
ISSN
1063-7826

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