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Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates

✍ Scribed by Loi, K.K.; Shen, L.; Wieder, H.H.; Chang, W.S.C.

Book ID
119786320
Publisher
IEEE
Year
1997
Tongue
English
Weight
81 KB
Volume
9
Category
Article
ISSN
1041-1135

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📜 SIMILAR VOLUMES

Electroabsorption modulators operating a
Electroabsorption modulators operating at 1.3 μm on GaAs substrates
✍ S. M. Lord; B. Pezeshki; J. S. Harris 📂 Article 📅 1993 🏛 Springer 🌐 English ⚖ 675 KB

This paper describes the growth and device performance of electroabsorption modulators on GaAs substrates operating near 1.3#m, the dispersion minimum for silica fibres. The key to the successful molecular beam epitaxial (MBE) growth of these devices was the incorporation of a linearly-graded buffer